Vol 48, No 11, 24 May 2012

  • Pui-In Mak

    Interview with Pui-In Mak

    Pui-In Mak from the University of Macau talks about the research behind his Letter Ultra-area-efficient three-stage amplifier using current buffer Miller compensation and parallel compensation.

  • UWB antenna prototype in its test setup for impedance matching

    Non-stop rejection

    UWB antennas reject interference without extra bandstop filters.

  • The effect of the carboxylic acid treatment can be seen clearly in these SEM images of fractured surface samples. The sample with the treatment (left) shows much more uniform dispersion of the CNTs compared to the clumping visible in the untreated sample (right)

    The micro lost in the nano

    Selective frequency SWNT/polymer EM absorbers by design.

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Also in this issue

  • Optical fibre

    Off the splice

    Researchers in Japan have fabricated a mechanical splicer that is based on a fibre alignment method, which avoids the need to remove the fibre coating. The splicer is simple yet achieves a low connection loss of 0.2 dB for a singlemode fibre connection.

  • Frequency-selective surface

    Unlimited range

    Collaborating researchers from the Netherlands, Spain, Ireland and the UK have developed a method for performing accurate dielectric measurements of nematic state liquid crystal (LC) mixtures at millimetre wavelengths. They have characterised the LC material in the frequency range 140 – 165 GHz, and unlike semiconductor devices no upper limit is imposed on the operating frequency.

  • Laser power

    The next episide

    Researchers from Switzerland have shown that it is possible to reduce the electrical dissipation of episide-up mounted, singlemode quantum cascade lasers (QCLs) in continuous-wave operation to values below 1 W. Their device shows optical output powers well above 5 mW (up to 120 mW), which makes them suitable for many spectroscopic applications.

  • Cross-sectional schematic of the proposed structure

    Buoyancy aid

    Tunnel diode body contact (TDBC) SOI technology is demonstrated to suppress the floating body effect in partially depleted SOI MOSFETs. In this work from China the layout pattern and the process steps are fully compatible with SOI CMOS technology, providing a possible way to use SOI technology in digital and analogue applications.

  • SEM image of the pin diode

    Pinning it down

    Fabrication, RF analysis and characterisation of a GaN pin diode for microwave integrated circuits is presented by researchers in Korea. With 50 μm p-metal diameter the diode shows forward turn-on voltage of 3.8 V and 370 V reverse bias breakdown voltage. The presented results show the potential of GaN pin technology for implementing high-breakdown switching devices and integrated circuits.

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Cover of Electronics Letters, Volume 49, Issue 25

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