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Silicide Technology for Integrated Circuits

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IET Digital Library

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  • Author:

  • Year: 2004

  • Format: Hardback

  • Product Code: PBEP0050

  • ISBN: 978-0-86341-352-0

  • Pagination: 304pp.

  • Stock Status: In stock

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Description

Scope: This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods.

About the Editor: Professor Chen is Dean at National Tsing Hua University, Taiwan.



Book readership

Suitable for engineers and students in microelectronics.

Level

Engineers and students.

Book contents

1 Silicides – an introduction

  • Origins and aluminum metallisation
  • Pit formation and Al spikes
  • Low temperature oxidation: the Au story
  • Silicides and backscattering spectrometry
  • Introduction to silicides of nanodimensions

2 Silicide formation

  • 2.1 Introduction
  • 2.2 Metal contacts
  • 2.3 Gate electrodes
  • 2.4 Interconnects
  • 2.5 Plug
  • 2.6 Diffusion barrier layer
  • 2.7 Adhesion and wetting layer
  • 2.8 Anti-reflection coating layer
  • 2.9 Conclusions

3 Titanium silicide technology

  • 3.1 Introduction
  • 3.2 Formation of titanium silicides
  • 3.3 Fundamental aspects of Ti/Si thin film reaction
  • 3.4 Integration concerns and scaling limits of titanium disilicide
  • 3.5 Methods of enhancing the C54-TiSi2 phase formation
  • 3.6 Conclusions

4 Cobalt silicide technology

  • 4.1 Scope of the chapter
  • 4.2 Material properties
  • 4.3 Fabrication technology
  • 4.4 Electrical characteristics
  • 4.5 Conclusions

5 Nickel silicide technology

  • 5.1 Scope of the chapter
  • 5.2 Introduction
  • 5.3 Characteristics and properties of Ni silicide phases
  • 5.4 Phase formation
  • 5.5 Thermal expansion of NiSi and related stress effects
  • 5.6 Texture of NiSi films on single crystal Si
  • 5.7 High temperature limitations
  • 5.8 Device characterisation
  • 5.9 Conclusions

6 Light-emitting iron disilicide

  • 6.1 Overview
  • 6.2 Growth methods
  • 6.3 Effect of stress on the illuminating characteristics of β-FeSi2

7 Silicide contacts for Si/Ge devices

  • 7.1 Scope of the chapter
  • 7.2 Surface properties
  • 7.3 Formation and stability
  • 7.4 Electrical properties
  • 7.5 Summary

8 Silicide technology for SOI devices

  • 8.1 Overview
  • 8.2 Source/drain engineering for SOI CMOS
  • 8.3 Challenges to implement existing bulk silicide technology to SOI devices
  • 8.4 Advanced silicide technology for SOI devices
  • 8.5 Summary

9 Characterisation of metal silicides

  • 9.1 Scope of the chapter
  • 9.2 Tools of materials characterisation
  • 9.3 Morphology observation
  • 9.4 Crystal structure of metal silicides
  • 9.5 Initial silicide formation
  • 9.6 Phase formation and identification
  • 9.7 Defect analysis
  • 9.8 Thermal stability (sheet resistance, PTEM,XTEM, BF, DF)



 

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