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Researchers in France have presented the first implementation of oxide confinement, applied to mid infrared vertical cavity lasers grown on GaSb substrate. Their technique overcomes previous problems of overly complex kinetics and poor structural and insulating properties, making the laser suitable for gas sensing applications.
A waffle type-n LDMOS electrostatic discharge (ESD) clamp with compact source and drain for high-voltage ESD protection has been proposed by researchers in China. They have achieved a high ESD failure current of 4.4 A with a total channel width of 60 μm only, and the waffle type structure provides more than 30% current handling capability than the conventional ones.
Researchers in Australia have developed a full code division multiplexed (CDM), electrical impedance tomography (EIT) device capable of simultaneous electroencephalography (EEG). The active electrode can be built using commercial off-the-shelf components employing standard PCB fabrication techniques; moreover it is small enough to be employed in a standard dense EEG scalp montage.
A memristor fabricated using low cost materials has been reported by researchers in the UK. Using a printed circuit board (PCB) and zinc oxide nanowires, the memristor has been characterised in two low pass filters and has great potential in batch fabrication.