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Interview with Pui-In Mak
Pui-In Mak from the University of Macau talks about the research behind his Letter Ultra-area-efficient three-stage amplifier using current buffer Miller compensation and parallel compensation.
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Vol 48, No 11, 24 May 2012
What's new?
Follow us on Twitter
Electronics Letters is now on Twitter! Follow @ElecLett for the latest news and highlights from each issue!
Open Access
Electronics Letters, along with all IET journals, now offers authors the option to publish their paper open access.
Past Issues
Past issues
See feature articles and interviews from recent issues of Electronics Letters.
To access the full content of all past issues please visit the IET Digital Library.
Special issue
To do - video snippet to go here, will automatically use most recent video if not found.
Also in this issue
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Off the splice
Researchers in Japan have fabricated a mechanical splicer that is based on a fibre alignment method, which avoids the need to remove the fibre coating. The splicer is simple yet achieves a low connection loss of 0.2 dB for a singlemode fibre connection.
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Unlimited range
Collaborating researchers from the Netherlands, Spain, Ireland and the UK have developed a method for performing accurate dielectric measurements of nematic state liquid crystal (LC) mixtures at millimetre wavelengths. They have characterised the LC material in the frequency range 140 – 165 GHz, and unlike semiconductor devices no upper limit is imposed on the operating frequency.
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The next episide
Researchers from Switzerland have shown that it is possible to reduce the electrical dissipation of episide-up mounted, singlemode quantum cascade lasers (QCLs) in continuous-wave operation to values below 1 W. Their device shows optical output powers well above 5 mW (up to 120 mW), which makes them suitable for many spectroscopic applications.
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Buoyancy aid
Tunnel diode body contact (TDBC) SOI technology is demonstrated to suppress the floating body effect in partially depleted SOI MOSFETs. In this work from China the layout pattern and the process steps are fully compatible with SOI CMOS technology, providing a possible way to use SOI technology in digital and analogue applications.
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Pinning it down
Fabrication, RF analysis and characterisation of a GaN pin diode for microwave integrated circuits is presented by researchers in Korea. With 50 μm p-metal diameter the diode shows forward turn-on voltage of 3.8 V and 370 V reverse bias breakdown voltage. The presented results show the potential of GaN pin technology for implementing high-breakdown switching devices and integrated circuits.
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