Scope: Separation-by-Implanted-Oxygen (SIMOX) technology is a method of fabrication of silicon on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing. SIMOX consists of a sequence of chapters, each of which is written by a pioneer or key contributor to the technical area. The content includes an historical perspective of SIMOX developments, fundamental formation mechanisms, emerging techniques, along with SOI material characterisation methods and results, technological processes from R&D to advanced applications, and a brief overview of VLSI circuit applications.
SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications.
For engineers and researchers in the field.
Overview of SIMOX Technology - Historical Perspective. Fundamental Process in SIMOX Layers Formation. Ion Implementation and Oxide Growth. SIMOX/SOI Processes. Flexibility Based on Thermodynamic Considerations. Electrical and Optical Characterisation of SIMOX Sibstrates. SIMOX Material Technology from R&D to Advanced Products.