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Fabrication of GaAs Devices

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IET Digital Library

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  • Author:

  • Year: 2005

  • Format: Hardback

  • Product Code: PBEP0060

  • ISBN: 978-0-86341-353-7

  • Pagination: 368pp.

  • Stock Status: In stock

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£83.00 Full price


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Description

Scope: This book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices.

The authors are with Sandia National Laboratories.



Level

Suitable for both new and practising engineers.

Book contents

1 Introduction to GaAs devices

  •  Scope of this book
  •  GaAs materials
  • Types of GaAs devices
  •  A brief history of GaAs devices
  •  Applications of GaAs devices

2 Semiconductor properties, growth, characterisation and processing techniques

  • 2.1 Chapter scope
  • 2.2 Semiconductor properties
  • 2.3 Bulk crystal growth
  • 2.4 Epitaxy
  • 2.5 Material characterisation
  • 2.6 Processing techniques
  • 2.7 Back end processing and analysis
  • 2.8 Conclusion

3 Cleaning and passivation of GaAs and related alloys

  • 3.1 Chapter scope
  • 3.2 Cleaning and native oxide removal
  • 3.3 Passivation of GaAs
  • 3.4 Conclusion

4 Wet etching and photolithography of GaAs and related alloys

  • 4.1 Chapter scope
  • 4.2 Mechanism of wet etch processes
  • 4.3 Rates and profiles
  • 4.4 Practical wet etching
  • 4.5 Compositional selectivity
  • 4.6 Effects of doping type
  • 4.7 Electrolytic effects in wet etching
  • 4.8 Effects of defects and damage
  • 4.9 Conclusion

5 Dry etching of GaAs and related alloys

  • 5.1 Chapter scope
  • 5.2 Comparison of wet and dry etching
  • 5.3 Overview of dry etching processes
  • 5.4 Ion-beam etching (IBE) and ion effects in other plasma processes
  • 5.5 Chemical dry etching
  • 5.6 Plasma etching at very low ion energies
  • 5.7 Conventional reactive ion etching (RIE)
  • 5.8 High-density plasma etching (HDPE)
  • 5.9 Reactive-ion-beam etching (RIBE) and chemically assisted ion-beam etching (CAIBE)
  • 5.10 General issues for dry etching
  • 5.11 Conclusion

6 Ohmic contacts

  • 6.1 Chapter scope
  • 6.2 Principles of ohmic contacts
  • 6.3 Fabrication and testing of ohmic contact
  • 6.4 Ohmic contacts to n-type GaAs
  • 6.5 Ohmic contacts to p-type GaAs
  • 6.6 Conclusion

7 Schottky contacts

  • 7.1 Chapter scope
  • 7.2 Physics and characterisation of Schottky contacts
  • 7.3 Fabrication of Schottky contacts
  • 7.4 Electrical characteristics of GaAs Schottky contacts
  • 7.5 Reliability of GaAs Schottky contacts
  • 7.6 Conclusion

8 Field effect transistors

  • 8.1 Chapter scope
  • 8.2 Field effect transistor basics
  • 8.3 Doping FETs
  • 8.4 Isolation of FETs
  • 8.5 Source and drain ohmic contacts
  • 8.6 Gate metal contacts
  • 8.7 Passivation
  • 8.8 Degradation of FETs
  • 8.9 Conclusion

9 Heterojunction bipolar transistors

  • 9.1 Chapter scope
  • 9.2 HBT basics
  • 9.3 MESA etching for GaAs-based HBTs
  • 9.4 Ohmic contacts for GaAs-based HBTs
  • 9.5 Passivation of GaAs-based HBTs
  • 9.6 Variations on HBT processing
  • 9.7 Reliability of HBTs
  • 9.8 Conclusions

10 Wet oxidation for optoelectronic and MIS GaAs devices

  • 10.1 Chapter scope
  • 10.2 Mechanism of wet oxidation processes
  • 10.3 Rates and profile evolution
  • 10.4 Practical wet oxidation
  • 10.5 Applications in optoelectronic devices
  • 10.6 Applications in electronic GaAs devices
  • 10.7 Conclusion

 



 

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