RF and Microwave Modelling and Measurement Techniques

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  • Book title: for Field Effect Transitors

  • Author:

  • Year: 2009

  • Format: Hardback

  • Product Code: SBEW0270

  • ISBN: 978-1-89112-189-0

  • Pagination: 350pp

  • Stock Status: In stock

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This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success.

The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such as: small signal, large signal, noise, and the artificial neural network based.

Book contents


Chapter 1—Introduction

1.1 Overview of III–V Compound Semiconductor Devices
1.2 RF/Microwave Device and Circuit CAD
1.3 Organization of This Book

Chapter 2—Representation of Microwave Two-Port Network

2.1 Signal Parameters
2.2 S- and T-parameters
2.3 Representation of Noisy Two-Port Network
2.4 Interconnections of Two-Port Network
2.5 Relationship between Three-Port and Two-Port
2.6 PI- and T-type Networks
2.7 Summary

Chapter 3—Microwave and RF Measurement Techniques

3.1 S-parameters Measurement
3.2 Noise Measurement Technique
3.3 Power Measurement System
3.4 Summary

Chapter 4—FET Small Signal Modeling and Parameter Extraction

4.1 HEMT Device
4.2 Small Signal Modeling
4.3 PHEMT Device Structure
4.4 Extraction Method of Pad Capacitances
4.5 Extraction Method of Extrinsic Inductances
4.6 Extraction Method of Extrinsic Resistance
4.7 Intrinsic Parameters
4.8 Scalable Small Signal Model
4.9 Semi-Analysis Method
4.10 Modeling up to 110 GHz
4.11 Summary

Chapter 5—FET Nonlinear Modeling and Parameter Extraction

5.1 Introduction
5.2 Example of Compact Modeling Technique
5.3 Summary

Chapter 6—Microwave Noise Modeling and Parameter Extraction Technique for FETs

6.1 Overview of Noise Model
6.2 Scalable Noise Model
6.3 Noise Parameters Extraction Method
6.4 Relationships among CS, CG, and CD FETs
6.5 Summary

Chapter 7—Artificial Neural Network Modeling Technique for FET

7.1 Overview of ANN Modeling Technique
7.2 ANN-Based Linear Modeling
7.3 ANN-Based Nonlinear Modeling
7.4 ANN-Based Noise Modeling
7.5 ANN Integration and Differential Technique
7.6 Summary


About the author

Jianjun Gao received the B.Eng. and Ph.D. degrees from the Tsinghua University, and M. Eng. Degree from Hebei semiconductor research institute. From 1999 to 2001, he was a Post-Doctoral Research Fellow at the Microelectronics R&D Center, Chinese Academy of Sciences developing PHEMT optical modulator driver. In 2001, he joined the school of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore, as a Research Fellow in semiconductor device modeling and on wafer measurement. 

In 2003, he joined the Institute for High-Frequency and Semiconductor System Technologies, Berlin University of Technology, Germany, as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004, he joined the Electronics Engineering Department, Carleton University, Canada, as Post-doctor Fellow working on the semiconductor neural network modeling technique. From 2004 to 2007, He was a Full Professor of radio engineering department at the Southeast University, Nanjing, China. 

Since 2007, he has been a Full professor of school of information science and technology, East China Normal University, Shanghai, China. He has been involved with the characterization, modeling and on wafer measurement of microwave semiconductor devices, optoelectronics device and high-speed integrated circuit design for 17 years. He has authored and coauthored over 80 research papers.

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