The IET hosted a one-day seminar reviewing the latest developments on mm-wave technologies for Gigabit per second communications.
The use of mm-wave transceiver technology for high-data-rate communications and pro-active safety systems like car-radar is gaining on popularity. The need for miniaturization irrespective of frequency or system requires to integrate complete functions on a chip or in a package including even the antenna.
A miniaturized V-band active transmit balun suitable for direct attachment to an integrated on-chip dipole antenna is proposed in this work.
This paper describes the design and development of a low cost driver amplifier covering 57 to 64GHz. The IC is realised on a low cost GaAs PHEMT process produced on 6” diameter wafers with optically defined gates.
The design of a two-stage differential cascode power amplifier (PA) for 81-86 GHz E-band applications is presented. The PA was realised in SiGe technology with fT/fmax 170/250 GHz.
65-GHz Class-C LC oscillator designed in 65nm CMOS technology by ST Microelectronics is presented. A three spiral transformer has been used to achieve low phase noise and low power consumption.
The first reported compact V-band 6-port IQ receiver MMIC integrated with IF amplifier using Infineon SiGe bipolar process is described. The receiver is designed to cover the 57–65 GHz broadband wireless communication system frequency allocation.
In order to design and implement a wireless transceiver system featuring high integrity, high date rate and flexible reconfigurability, some newly-emerging and promising technologies or concepts, such as SIC, AiP, LTCC, 60-GHz band, RF MEMS will be incorporated and combined together.
This paper describes the design and the simulated results of a W-band amplifier housed in a package. The LNA is designed in a SiGe technology with 200GHz of transition frequency, and is intended to operate around 94GHz. The package is flip-chip and adopts a fine-pitch copper-pillar technology.
A waveguide-fed high gain planar antenna operating at approximately 300 GHz is designed. The antenna configuration is based on a Frequency Selective Surface (FSS) placed in front of a waveguide-fed aperture in a ground plane.
A leaky-wave antenna operating at the frequency of 94 GHz and showing flexible radiation properties, is presented in this paper. The proposed structure is based on a microstrip line loaded with metallic posts.
Millimeter wave technology paves the way to next generation wireless applications, e.g. high-bandwidth LAN at 60 GHz. There is a growing demand for using inexpensive printed circuit board substrates (PCBs) for mm-wave devices.
Two compact V-band low noise amplifier, one single-ended and one differential, using 0.35 μm SiGe HBT process (Infineon fT / fmax=170/250 GHz) are described in this paper.
E-band spectrum at 71 to 76GHz and 81 to 86GHz offers worldwide availability and wide bandwidths under a light license system . This makes it very attractive for very high data rate applications such as cellular back-haul. Component availability is currently relatively limited and cost relatively high  but this is starting to change.
This paper describes both 14GHz LNA and 60GHz HPA MMICs for space applications. It discusses the need for high level performance and in the case of the LNA a limited power budget, which is a primary requirement for space applications.